1. HOME
  2. Photodetectors
  3. InGaAs NIR Amplified Photodetector Module，Free-Space，800-1700nm

InGaAs NIR Amplified Photodetector Module，Free-Space，800-1700nm

The picture of the Amplified Photodetector, Si, Fixed Gian, free-space，400-1100nm
If you want to know the product details and prices, or If the parameters are not suitable, you can contact me for customization.
微信头像
Name：Huang （Sales Engineer）
WeChat： 13427781756 (Scan QR Code）
WhatsApp：+8613427781756 Web | App
Email：Huangqianyuan@glgyzn.com

Overview

 The InGaAs NIR Amplified Photodetector Module is an advanced device designed for the detection and measurement of near-infrared signals with Free-Space input. It features a low-noise, high-gain InGaAs-PIN photodiode and is equipped with an SMA connector. This module has a wide spectral range of 800-1700nm and is suitable for applications such as spectroscopy, remote sensing, and laser communications. It also provides excellent signal-to-noise ratio and high dynamic range for accurate detection of weak signals. The module is compact and lightweight, making it easy to install and use.

Features

  High temperature stability
  Low noise, high gain
  All metal shell, excellent shielding performance
  M6 threaded hole for easy installation

Application

  Lidar
  Industrial imaging
  Detects low-light signals in space
  Detect fast space laser pulses
  Rf and pulse waveform extraction of laser light sources
  Spatial heterodyne laser beat signal detection
  Wireless optical communication
 Radio frequency optical transmission (ROF) systems
 TOF

Download

Specifications

FPD510-NIR-250M FPD510-NIR-500M
material InGaAs InGaAs
Wavelength Range 800-1700nm 800-1700nm
Optical Input Free-space Free-space
Active Area Diameter 200um 200um
Responsiveness 0.9A/W @ 1550nm 0.9A/W @ 1550nm
Bandwidth DC-250MHz DC-500MHz
Rise Time 1.4ns 0.7ns
Maximum gain 1.6x10^4 V/W 1.1x10^3V/W
Minimum optical power -30.0dBm (1uw) -23.5dBm (4.5uw
Saturated optical power -6.0dBm (0.25mw) 3.6dBm (2.3mw)
Noise voltage <16mV <5mV
Maximum output amplitude 4.0V 2.5V
Operating voltage 12VDC ±10% 12VDC ±10%
Operating current <100mA <100mA
Output connector SMA SMA
Output impedance 50Ω 50Ω
Output coupling mode DC DC
Operating temperature 0~40℃ 0~40℃
Storage temperature 0~50℃ 0~50℃
Dimensions 60mm x 50mm x 32mm (Length x width x thickness) 60mm x 50mm x 32mm (Length x width x thickness)

Responsivity

The typical responsivity of PFD510-NIR

Mechanical Drawing

The mechanical Drawing of PFD510-NIR

InGaAs NIR Amplified Photodetector Module，Free-Space，800-1700nm