紫外光电二极管-UV385S1N1

响应波长：200-450nm，具有体积小、灵敏度高、暗电流低、抗可见光和红外干扰能力强。

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特性 Features

• Indium Gallium nitride based material
• Broad band UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• TO-46 metal housing
• High responsivity and low dark current

应用 Applications

• UV LED monitoring
• UV radiation dose measurement
• UV Curing

下载 Download

UV385S1N1.pdf

规格 Specifications

Parameter	Symbol	Value	Unit
Wavelength of peak responsivisity	λmax	385	nm
Peak responsivisity (at 385nm)	Rmax	0.205	A/W
Spectral response range		220~420	nm
UV/visible rejection ratio (Rmax/R400 nm)	VB	>103
Chip size	A	1	mm2
Dark current (1 V reverse bias)	Id	<1	nA
Capacitance (at 0 V and 1 MHz	C	55	pF
Temperature coefficient	Tc	-0.1	%/℃
Operation temperature range	Topt	-10~60	℃
Storage temperature range	Tstor	-40~85	℃
Soldering temperature (3 s)	Tsold	260	℃
Reverse voltage	VRmax	10	V

光谱响应 Spectral response

封装尺寸 Package dimensions

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